收藏本站
SiHU3N50D
www.vishay.com
PRODUCT SUMMARY
D Series Power MOSFET
FEATURES
? Optimal Design
Vishay Siliconix
V DS (V) at T J max.
550
- Low Area Specific On-Resistance
R DS(on) max. ( ? ) at 25 °C
Q g (max.) (nC)
V GS = 10 V
12
3.2
- Low Input Capacitance (C iss )
- Reduced Capacitive Switching Losses
Q gs (nC)
Q gd (nC)
Configuration
2
3
Single
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
? Optimal Efficiency and Operation
Available
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R on x Q g
IPAK
D
- Fast Switching
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
D
(TO-251)
G
APPLICATIONS
? Consumer Electronics ?
- Displays (LCD or Plasma TV)
? Server and Telecom Power Supplies
G
D S
S
N-Channel MOSFET
- SMPS
? Industrial
- Welding
- Induction Heating
- Motor Drives
? Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
IPAK (TO-251)
SiHU3N50D-E3
SiHU3N50D-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
SYMBOL
V DS
V GS
LIMIT
500
± 30
30
UNIT
V
Continuous Drain Current (T J = 150 °C)
Current a
Pulsed Drain
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
I DM
3.0
1.9
5.5
A
Linear Derating Factor
0.56
W/°C
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
E AS
P D
T J , T stg
9
69
-55 to +150
mJ
W
°C
Drain-Source Voltage Slope
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
T J = 125 °C
for 10 s
dV/dt
24
0.22
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V DD = 50 V, starting T J = 25 °C, L = 2.3 mH, R g = 25 ? , I AS = 2.8 A.
c. 1.6 mm from case.
d. I SD ? I D , starting T J = 25 °C.
S14-0005-Rev. B, 20-Jan-14
1
Document Number: 91493
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIHU5N50D-E3 MOSFET N-CH 500V 5.3A TO251 IPAK
SIJ400DP-T1-GE3 MOSFET N-CH 30V PPAK SO-8L
SIJ458DP-T1-GE3 MOSFET N-CH 30V 8-SOIC
SIJ482DP-T1-GE3 MOSFET N-CH 80V 60A SO-8
SIJ800DP-T1-GE3 MOSFET N-CH 40V PPAK SO-8L
SIM-012SBT87 EMITTER IR SIDE VIEW SMD T/R
SIM-030ST LED IR 870NM 30MW SR SMD
SIM-20ST EMITTER IR 950NM SIDE VIEW TH
相关代理商/技术参数
SiHU3N50D-GE3 功能描述:MOSFET 500V 3A 3.2Ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU5N50D 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET
SIHU5N50D-E3 功能描述:MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SiHU5N50D-GE3 功能描述:MOSFET 500V 5A 1.5Ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU6N62E-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel
SIHU7N60E 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET
SIHU7N60E-E3 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU7N60E-GE3 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube